BLM08N06-E Specs and Replacement

Type Designator: BLM08N06-E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOP8

BLM08N06-E substitution

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BLM08N06-E datasheet

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 blm08n06-p blm08n06-d blm08n06-e.pdf pdf_icon

BLM08N06-E

Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

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BLM08N06-E

Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

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BLM08N06-E

Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

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 blm08p02-r blm08p02-e.pdf pdf_icon

BLM08N06-E

Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS D excellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) D variety of applications. R ... See More ⇒

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Detailed specifications: BLM06N03-D, BLM06N10-B, BLM06N10-P, BLM075N04-D, BLM07N06-D, BLM07N06-P, BLM07N20-C, BLM08N06-D, IRFB7545, BLM08N06-P, BLM08N10-B, BLM08N10-P, BLM08N68-P, BLM08P02-E, BLM08P02-R, BLM10P03-D, BLM10P03-E

Keywords - BLM08N06-E MOSFET specs

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