BLM08N06-E Datasheet and Replacement. Cross Reference Search

BLM08N06-E Datasheet (PDF)

..1. Size:1122K belling
blm08n06-p blm08n06-d blm08n06-e.pdf pdf_icon

Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS Dexcellent R , low gate charge. It can be used in a wide R

8.1. Size:1177K belling
blm08n10-p blm08n10-b.pdf pdf_icon

Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS Dexcellent R , low gate charge. It can be used in a wide R

8.2. Size:675K belling
blm08n68-p.pdf pdf_icon

Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS Dexcellent R , low gate charge. It can be used in a wide R

9.1. Size:1827K belling
blm08p02-r blm08p02-e.pdf pdf_icon

Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS Dexcellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) Dvariety of applications. R

Datasheet: BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P , BLM07N20-C , BLM08N06-D , 8N60 , BLM08N06-P , BLM08N10-B , BLM08N10-P , BLM08N68-P , BLM08P02-E , BLM08P02-R , BLM10P03-D , BLM10P03-E .