BLM08P02-R Datasheet and Replacement
Type Designator: BLM08P02-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 16 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: PDFN3.3X3.3
- MOSFET Cross-Reference Search
BLM08P02-R Datasheet (PDF)
blm08p02-r blm08p02-e.pdf

Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS Dexcellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) Dvariety of applications. R
blm08n10-p blm08n10-b.pdf

Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS Dexcellent R , low gate charge. It can be used in a wide R
blm08n06-p blm08n06-d blm08n06-e.pdf

Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS Dexcellent R , low gate charge. It can be used in a wide R
blm08n68-p.pdf

Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS Dexcellent R , low gate charge. It can be used in a wide R
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IXTA48N20T | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL
Keywords - BLM08P02-R MOSFET datasheet
BLM08P02-R cross reference
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History: IXTA48N20T | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL



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