All MOSFET. BLM10P03-R Datasheet

 

BLM10P03-R Datasheet and Replacement


   Type Designator: BLM10P03-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN3.3X3.3
 

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BLM10P03-R Datasheet (PDF)

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BLM10P03-R

BLM10P03Power MOSFET1. DescriptionAdvantagesBLM10P03 uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV -30 VDSI -52 AD(TO-252)R 7 mDS(ON)@10V.TypR 10 mDS(ON)@4.5V.TypPin1FeaturesTO-252 Top View SOP-8 Top V

Datasheet: BLM08N10-B , BLM08N10-P , BLM08N68-P , BLM08P02-E , BLM08P02-R , BLM10P03-D , BLM10P03-E , BLM10P03-Q , IRF730 , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P .

History: SWD078R08E8T

Keywords - BLM10P03-R MOSFET datasheet

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