BLM10P03-R Specs and Replacement
Type Designator: BLM10P03-R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PDFN3.3X3.3
BLM10P03-R substitution
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BLM10P03-R datasheet
blm10p03-d blm10p03-e blm10p03-q blm10p03-r.pdf
BLM10P03 Power MOSFET 1. Description Advantages BLM10P03 uses advanced trench technology and design to provide excellent R with low DS(ON) gate charge. It can be used in a wide variety of applications. Key Characteristics Parameter Value Unit V -30 V DS I -52 A D(TO-252) R 7 m DS(ON)@10V .Typ R 10 m DS(ON)@4.5V .Typ Pin1 Features TO-252 Top View SOP-8 Top V... See More ⇒
Detailed specifications: BLM08N10-B , BLM08N10-P , BLM08N68-P , BLM08P02-E , BLM08P02-R , BLM10P03-D , BLM10P03-E , BLM10P03-Q , AO4468 , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P .
Keywords - BLM10P03-R MOSFET specs
BLM10P03-R cross reference
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