All MOSFET. BLM16N10-D Datasheet

 

BLM16N10-D Datasheet and Replacement


   Type Designator: BLM16N10-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-252
 

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BLM16N10-D Datasheet (PDF)

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BLM16N10-D

Green Product BLM16N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM16N10 uses advanced trench technology to provide V = 100V,I = 60A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM10P03-Q , BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , IRF540 , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 , BLM80P10-D , BLM80P10-P , BLM8205B .

History: AFP3401S | SUP85N10-10P | VBE2311 | 2SJ451 | AOSS21311C | TMU630Z | PMV100ENEA

Keywords - BLM16N10-D MOSFET datasheet

 BLM16N10-D cross reference
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