BLP023N10-B MOSFET. Datasheet pdf. Equivalent
Type Designator: BLP023N10-B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 416.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 224 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1715 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO-263
BLP023N10-B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLP023N10-B Datasheet (PDF)
blp023n10-b blp023n10-p.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp023n10-ba.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp023n10-t.pdf
BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp024n10-ba blp024n10-t.pdf
BLP024N10 MOSFET Step-Down Converter , 1Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp021n10-t.pdf
BLP021N10 MOSFET Step-Down Converter 1Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp02n08-b blp02n08-p.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp02n08-t.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp028n10-b blp028n10-p.pdf
BLP028N10 MOSFET Step-Down Converter 1Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp022n10-ba.pdf
BLP022N10 MOSFET Step-Down Converter 1Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp02n08-f.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp02n06-t.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n06-d.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n06l-d.pdf
BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
blp025n10-b blp025n10-p.pdf
BLP025N10 MOSFET Step-Down Converter 1Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10
blp02n06l-q.pdf
BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
blp02n06-p.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n08-ba.pdf
BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp02n06-q.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: VBMB165R10
History: VBMB165R10
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