All MOSFET. FQP13N10 Datasheet

 

FQP13N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP13N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12.8 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO220

FQP13N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP13N10 Datasheet (PDF)

1.1. fqp13n10l.pdf Size:554K _fairchild_semi

FQP13N10
FQP13N10

December 2000 TM QFET QFET QFET QFET FQP13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.8A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology is especial

1.2. fqp13n10.pdf Size:618K _fairchild_semi

FQP13N10
FQP13N10

January 2001 TM QFET QFET QFET QFET FQP13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.8A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially

 4.1. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi

FQP13N10
FQP13N10

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tailored to mi

4.2. fqp13n06l.pdf Size:659K _fairchild_semi

FQP13N10
FQP13N10

May 2001 TM QFET FQP13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to • F

 4.3. fqp13n06.pdf Size:664K _fairchild_semi

FQP13N10
FQP13N10

May 2001 TM QFET FQP13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast swit

4.4. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi

FQP13N10
FQP13N10

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fast swi

 4.5. fqp13n50c.pdf Size:1062K _fairchild_semi

FQP13N10
FQP13N10

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

4.6. fqp13n50 fqpf13n50.pdf Size:883K _fairchild_semi

FQP13N10
FQP13N10

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast sw

Datasheet: FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L , IRFZ48N , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 .

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