All MOSFET. BLP02N06-P Datasheet

 

BLP02N06-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP02N06-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68.4 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1519 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-220

 BLP02N06-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP02N06-P Datasheet (PDF)

 ..1. Size:941K  belling
 blp02n06-p.pdf

BLP02N06-P BLP02N06-P

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.1. Size:727K  belling
 blp02n06-t.pdf

BLP02N06-P BLP02N06-P

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.2. Size:1112K  belling
 blp02n06-d.pdf

BLP02N06-P BLP02N06-P

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.3. Size:693K  belling
 blp02n06-q.pdf

BLP02N06-P BLP02N06-P

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPM7002BKM | FQP2P40 | TK39N60W5 | 2N6799 | 2N6784JANTX

 

 
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