BLP02N08-BA Specs and Replacement

Type Designator: BLP02N08-BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 122 nS

Cossⓘ - Output Capacitance: 2350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO263-7

BLP02N08-BA substitution

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BLP02N08-BA datasheet

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BLP02N08-BA

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

 4.1. Size:975K  belling
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BLP02N08-BA

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

 5.1. Size:752K  belling
 blp02n08-t.pdf pdf_icon

BLP02N08-BA

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V ... See More ⇒

 5.2. Size:953K  belling
 blp02n08-f.pdf pdf_icon

BLP02N08-BA

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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Detailed specifications: BLP028N10-P, BLP02N06-D, BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, BLP02N06-Q, BLP02N06-T, BLP02N08-B, AO3401, BLP02N08-F, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D, BLP036N08-P

Keywords - BLP02N08-BA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.