BLP038N10GL-B Specs and Replacement
Type Designator: BLP038N10GL-B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 192.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 108 nS
Cossⓘ -
Output Capacitance: 1242 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-263
BLP038N10GL-B substitution
- MOSFET ⓘ Cross-Reference Search
BLP038N10GL-B datasheet
..1. Size:1003K belling
blp038n10gl-p blp038n10gl-b.pdf 
BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS ... See More ⇒
2.1. Size:938K belling
blp038n10gl-d.pdf
BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par... See More ⇒
6.1. Size:737K belling
blp038n15-t.pdf
BLP038N15 MOSFET Step-Down Converter 1 Description , BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150... See More ⇒
9.1. Size:1099K belling
blp03n10-ba blp03n10-t.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.2. Size:998K belling
blp039n08-q.pdf
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.3. Size:959K belling
blp03n10-f.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.4. Size:958K belling
blp039n08-d.pdf
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par... See More ⇒
9.5. Size:1008K belling
blp039n08-p blp039n08-b.pdf
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.6. Size:963K belling
blp03n10-b blp03n10-p.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.7. Size:967K belling
blp03n08-f.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.8. Size:955K belling
blp036n08-d.pdf
BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para... See More ⇒
9.9. Size:1099K belling
blp03n08-ba blp03n08-t.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.10. Size:1005K belling
blp032n08-t.pdf
BLP032N08 MOSFET Step-Down Converter 1 Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒
9.11. Size:976K belling
blp03n08-b blp03n08-p.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.12. Size:834K belling
blp032n06-q.pdf
BLP032N06 MOSFET Step-Down Converter , 1 Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.13. Size:997K belling
blp036n08-p blp036n08-b.pdf
BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para... See More ⇒
Detailed specifications: BLP02N08-F, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D, BLP036N08-P, 12N60, BLP038N10GL-D, BLP038N10GL-P, BLP038N15-T, BLP039N08-B, BLP039N08-D, BLP039N08-P, BLP039N08-Q, BLP03N08-B
Keywords - BLP038N10GL-B MOSFET specs
BLP038N10GL-B cross reference
BLP038N10GL-B equivalent finder
BLP038N10GL-B pdf lookup
BLP038N10GL-B substitution
BLP038N10GL-B replacement
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