BLP039N08-D Specs and Replacement
Type Designator: BLP039N08-D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 113
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 1142
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO-252
-
MOSFET ⓘ Cross-Reference Search
BLP039N08-D datasheet
..1. Size:958K belling
blp039n08-d.pdf 
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par... See More ⇒
4.1. Size:998K belling
blp039n08-q.pdf
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
4.2. Size:1008K belling
blp039n08-p blp039n08-b.pdf
BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.1. Size:1099K belling
blp03n10-ba blp03n10-t.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.2. Size:959K belling
blp03n10-f.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.3. Size:963K belling
blp03n10-b blp03n10-p.pdf
BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
9.4. Size:967K belling
blp03n08-f.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.5. Size:955K belling
blp036n08-d.pdf
BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para... See More ⇒
9.6. Size:1099K belling
blp03n08-ba blp03n08-t.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.7. Size:737K belling
blp038n15-t.pdf
BLP038N15 MOSFET Step-Down Converter 1 Description , BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150... See More ⇒
9.8. Size:938K belling
blp038n10gl-d.pdf
BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par... See More ⇒
9.9. Size:1005K belling
blp032n08-t.pdf
BLP032N08 MOSFET Step-Down Converter 1 Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒
9.10. Size:976K belling
blp03n08-b blp03n08-p.pdf
BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.11. Size:1003K belling
blp038n10gl-p blp038n10gl-b.pdf
BLP038N10GL MOSFET Step-Down Converter , 1 Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS ... See More ⇒
9.12. Size:834K belling
blp032n06-q.pdf
BLP032N06 MOSFET Step-Down Converter , 1 Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.13. Size:997K belling
blp036n08-p blp036n08-b.pdf
BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para... See More ⇒
Detailed specifications: BLP036N08-B
, BLP036N08-D
, BLP036N08-P
, BLP038N10GL-B
, BLP038N10GL-D
, BLP038N10GL-P
, BLP038N15-T
, BLP039N08-B
, IRF530
, BLP039N08-P
, BLP039N08-Q
, BLP03N08-B
, BLP03N08-BA
, BLP03N08-F
, BLP03N08-P
, BLP03N08-T
, BLP03N10-B
.
History: RFL1N08
| RD70HHF1
| IPI50R399CP
Keywords - BLP039N08-D MOSFET specs
BLP039N08-D cross reference
BLP039N08-D equivalent finder
BLP039N08-D pdf lookup
BLP039N08-D substitution
BLP039N08-D replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
