BLP03N10-B Specs and Replacement

Type Designator: BLP03N10-B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-263

BLP03N10-B substitution

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BLP03N10-B datasheet

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 blp03n10-b blp03n10-p.pdf pdf_icon

BLP03N10-B

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒

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 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP03N10-B

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒

 5.1. Size:959K  belling
 blp03n10-f.pdf pdf_icon

BLP03N10-B

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒

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 blp03n08-f.pdf pdf_icon

BLP03N10-B

BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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Detailed specifications: BLP039N08-D, BLP039N08-P, BLP039N08-Q, BLP03N08-B, BLP03N08-BA, BLP03N08-F, BLP03N08-P, BLP03N08-T, BS170, BLP03N10-BA, BLP03N10-F, BLP03N10-P, BLP03N10-T, BLP042N10G-B, BLP042N10G-P, BLP042N15J-B, BLP042N15J-P

Keywords - BLP03N10-B MOSFET specs

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