BLP042N10G-P Specs and Replacement

Type Designator: BLP042N10G-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 1227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-220

BLP042N10G-P substitution

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BLP042N10G-P datasheet

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BLP042N10G-P

BLP042N10G MOSFET Step-Down Converter , 1 Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Pa... See More ⇒

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BLP042N10G-P

BLP042N15J MOSFET Step-Down Converter 1 Description , BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTIC... See More ⇒

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BLP042N10G-P

BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit... See More ⇒

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BLP042N10G-P

BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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Detailed specifications: BLP03N08-P, BLP03N08-T, BLP03N10-B, BLP03N10-BA, BLP03N10-F, BLP03N10-P, BLP03N10-T, BLP042N10G-B, 5N60, BLP042N15J-B, BLP042N15J-P, BLP045N10-B, BLP045N10-P, BLP04N08-B, BLP04N08-BA, BLP04N08-P, BLP04N10-B

Keywords - BLP042N10G-P MOSFET specs

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