All MOSFET. BLP042N15J-B Datasheet

 

BLP042N15J-B Datasheet and Replacement


   Type Designator: BLP042N15J-B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 765 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-263
 

 BLP042N15J-B substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLP042N15J-B Datasheet (PDF)

 ..1. Size:1059K  belling
 blp042n15j-b blp042n15j-p.pdf pdf_icon

BLP042N15J-B

BLP042N15J MOSFET Step-Down Converter 1Description , BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTIC

 6.1. Size:999K  belling
 blp042n10g-p blp042n10g-b.pdf pdf_icon

BLP042N15J-B

BLP042N10G MOSFET Step-Down Converter , 1Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Pa

 9.1. Size:956K  belling
 blp045n10-b blp045n10-p.pdf pdf_icon

BLP042N15J-B

BLP045N10 MOSFET 1Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit

 9.2. Size:972K  belling
 blp04n08-b blp04n08-p.pdf pdf_icon

BLP042N15J-B

BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

SHOW MORE

Datasheet: BLP03N08-T , BLP03N10-B , BLP03N10-BA , BLP03N10-F , BLP03N10-P , BLP03N10-T , BLP042N10G-B , BLP042N10G-P , RFP50N06 , BLP042N15J-P , BLP045N10-B , BLP045N10-P , BLP04N08-B , BLP04N08-BA , BLP04N08-P , BLP04N10-B , BLP04N10-P .

History: DH1K1N10F | FQPF50N06 | BLP039N08-P | BLP05N08G-B | BLM06N10-P | 9N25AF | AOK065A60FD

Keywords - BLP042N15J-B MOSFET datasheet

 BLP042N15J-B cross reference
 BLP042N15J-B equivalent finder
 BLP042N15J-B lookup
 BLP042N15J-B substitution
 BLP042N15J-B replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.