BLP04N08-B Specs and Replacement
Type Designator: BLP04N08-B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1181 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO-263
BLP04N08-B substitution
- MOSFET ⓘ Cross-Reference Search
BLP04N08-B datasheet
blp04n08-b blp04n08-p.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
blp04n08-ba.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
blp04n10-b blp04n10-p.pdf
BLP04N10 MOSFET Step-Down Converter , 1 Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 ... See More ⇒
blp045n10-b blp045n10-p.pdf
BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit... See More ⇒
Detailed specifications: BLP03N10-P, BLP03N10-T, BLP042N10G-B, BLP042N10G-P, BLP042N15J-B, BLP042N15J-P, BLP045N10-B, BLP045N10-P, 20N50, BLP04N08-BA, BLP04N08-P, BLP04N10-B, BLP04N10-P, BLP055N09G-B, BLP055N09G-P, BLP055N10-B, BLP055N10-P
Keywords - BLP04N08-B MOSFET specs
BLP04N08-B cross reference
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BLP04N08-B replacement
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