BLP04N08-B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLP04N08-B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 124
nC
trⓘ - Rise Time: 68
nS
Cossⓘ -
Output Capacitance: 1181
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
TO-263
BLP04N08-B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLP04N08-B
Datasheet (PDF)
..1. Size:972K belling
blp04n08-b blp04n08-p.pdf 
BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
0.1. Size:1013K belling
blp04n08-ba.pdf
BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
8.1. Size:1017K belling
blp04n10-b blp04n10-p.pdf
BLP04N10 MOSFET Step-Down Converter , 1Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
9.1. Size:956K belling
blp045n10-b blp045n10-p.pdf
BLP045N10 MOSFET 1Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit
9.2. Size:1059K belling
blp042n15j-b blp042n15j-p.pdf
BLP042N15J MOSFET Step-Down Converter 1Description , BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTIC
9.3. Size:999K belling
blp042n10g-p blp042n10g-b.pdf
BLP042N10G MOSFET Step-Down Converter , 1Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Pa
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