BLP04N10-B Datasheet and Replacement
Type Designator: BLP04N10-B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 114 nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1594 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-263
BLP04N10-B substitution
BLP04N10-B Datasheet (PDF)
blp04n10-b blp04n10-p.pdf
BLP04N10 MOSFET Step-Down Converter , 1Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp04n08-b blp04n08-p.pdf
BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp04n08-ba.pdf
BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp045n10-b blp045n10-p.pdf
BLP045N10 MOSFET 1Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit
Datasheet: BLP042N10G-P , BLP042N15J-B , BLP042N15J-P , BLP045N10-B , BLP045N10-P , BLP04N08-B , BLP04N08-BA , BLP04N08-P , IRF2807 , BLP04N10-P , BLP055N09G-B , BLP055N09G-P , BLP055N10-B , BLP055N10-P , BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q .
Keywords - BLP04N10-B MOSFET datasheet
BLP04N10-B cross reference
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