All MOSFET. BLP055N10-P Datasheet

 

BLP055N10-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP055N10-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 173.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 878 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220

 BLP055N10-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP055N10-P Datasheet (PDF)

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BLP055N10-P BLP055N10-P

BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

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 blp055n09g-b blp055n09g-p.pdf

BLP055N10-P BLP055N10-P

BLP055N09G MOSFET Step-Down Converter 1Description , BLP055N09G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and Motor drivers. KEY CHARACTERISTICS Parameter Value Unit V 90 V DSSI 120 A

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 blp05n08g-b blp05n08g-p.pdf

BLP055N10-P BLP055N10-P

BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp05n08g-q.pdf

BLP055N10-P BLP055N10-P

BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete

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 blp05n15-b blp05n15-p.pdf

BLP055N10-P BLP055N10-P

BLP05N15 MOSFET Step-Down Converter 1Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SUP90N08-6M8P | SFG10R10PF | 2SJ44

 

 
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