BLP05N08G-P MOSFET. Datasheet pdf. Equivalent
Type Designator: BLP05N08G-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 173.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 607 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
BLP05N08G-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLP05N08G-P Datasheet (PDF)
blp05n08g-b blp05n08g-p.pdf
BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp05n08g-q.pdf
BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete
blp05n15-b blp05n15-p.pdf
BLP05N15 MOSFET Step-Down Converter 1Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150
blp055n10-p blp055n10-b.pdf
BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
blp055n09g-b blp055n09g-p.pdf
BLP055N09G MOSFET Step-Down Converter 1Description , BLP055N09G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and Motor drivers. KEY CHARACTERISTICS Parameter Value Unit V 90 V DSSI 120 A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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