All MOSFET. BLP05N08G-Q Datasheet

 

BLP05N08G-Q Datasheet and Replacement


   Type Designator: BLP05N08G-Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 607 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6
 

 BLP05N08G-Q substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLP05N08G-Q Datasheet (PDF)

 ..1. Size:1416K  belling
 blp05n08g-q.pdf pdf_icon

BLP05N08G-Q

BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete

 4.1. Size:983K  belling
 blp05n08g-b blp05n08g-p.pdf pdf_icon

BLP05N08G-Q

BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 8.1. Size:936K  belling
 blp05n15-b blp05n15-p.pdf pdf_icon

BLP05N08G-Q

BLP05N15 MOSFET Step-Down Converter 1Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150

 9.1. Size:976K  belling
 blp055n10-p blp055n10-b.pdf pdf_icon

BLP05N08G-Q

BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SQJ407EP

Keywords - BLP05N08G-Q MOSFET datasheet

 BLP05N08G-Q cross reference
 BLP05N08G-Q equivalent finder
 BLP05N08G-Q lookup
 BLP05N08G-Q substitution
 BLP05N08G-Q replacement

 

 
Back to Top

 


 
.