BLP05N08G-Q Specs and Replacement
Type Designator: BLP05N08G-Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 607 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5X6
BLP05N08G-Q substitution
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BLP05N08G-Q datasheet
blp05n08g-q.pdf
BLP05N08G MOSFET Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete... See More ⇒
blp05n08g-b blp05n08g-p.pdf
BLP05N08G Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
blp05n15-b blp05n15-p.pdf
BLP05N15 MOSFET Step-Down Converter 1 Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150 ... See More ⇒
blp055n10-p blp055n10-b.pdf
BLP055N10 MOSFET Step-Down Converter , 1 Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
Detailed specifications: BLP04N10-B, BLP04N10-P, BLP055N09G-B, BLP055N09G-P, BLP055N10-B, BLP055N10-P, BLP05N08G-B, BLP05N08G-P, STP65NF06, BLP05N15-B, BLP05N15-P, BLP065N08G-B, BLP065N08G-D, BLP065N08GL-Q, BLP065N08G-P, BLP065N08G-U, BLP065N10GL-B
Keywords - BLP05N08G-Q MOSFET specs
BLP05N08G-Q cross reference
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BLP05N08G-Q substitution
BLP05N08G-Q replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
