BLP065N08G-P Datasheet and Replacement
Type Designator: BLP065N08G-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
BLP065N08G-P substitution
BLP065N08G-P Datasheet (PDF)
blp065n08g-b blp065n08g-p.pdf
BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85
blp065n08g-d blp065n08g-u.pdf
BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85
blp065n08gl-q.pdf
BLP065N08GL MOSFET Step-Down Converter , 1Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P
blp065n10gl-p blp065n10gl-b.pdf
BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par
Datasheet: BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q , BLP05N15-B , BLP05N15-P , BLP065N08G-B , BLP065N08G-D , BLP065N08GL-Q , IRLB3034 , BLP065N08G-U , BLP065N10GL-B , BLP065N10GL-D , BLP065N10GL-P , BLP065N10GL-Q , BLP06N08G-B , BLP06N08G-P , BLP075N10G-B .
History: 2N60L-T6C-K | UT2312 | IRFP27N60KPBF | PQ6V2JN | BLP05N15-B | AONS66407 | 2N60G-TM3-T
Keywords - BLP065N08G-P MOSFET datasheet
BLP065N08G-P cross reference
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BLP065N08G-P substitution
BLP065N08G-P replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2N60L-T6C-K | UT2312 | IRFP27N60KPBF | PQ6V2JN | BLP05N15-B | AONS66407 | 2N60G-TM3-T
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