All MOSFET. BLP065N10GL-Q Datasheet

 

BLP065N10GL-Q Datasheet and Replacement


   Type Designator: BLP065N10GL-Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN5X6
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BLP065N10GL-Q Datasheet (PDF)

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BLP065N10GL-Q

BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

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BLP065N10GL-Q

BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

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 blp065n08gl-q.pdf pdf_icon

BLP065N10GL-Q

BLP065N08GL MOSFET Step-Down Converter , 1Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P

 7.2. Size:969K  belling
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BLP065N10GL-Q

BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

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History: VBNC1303 | IRFS4010PBF

Keywords - BLP065N10GL-Q MOSFET datasheet

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