BLP06N08G-P Specs and Replacement

Type Designator: BLP06N08G-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 880 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-220

BLP06N08G-P substitution

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BLP06N08G-P datasheet

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 blp06n08g-b blp06n08g-p.pdf pdf_icon

BLP06N08G-P

BLP06N08G MOSFET Step-Down Converter , 1 Description BLP06N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value ... See More ⇒

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 blp065n08gl-q.pdf pdf_icon

BLP06N08G-P

BLP065N08GL MOSFET Step-Down Converter , 1 Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P... See More ⇒

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 blp065n08g-d blp065n08g-u.pdf pdf_icon

BLP06N08G-P

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒

 9.3. Size:962K  belling
 blp065n08g-b blp065n08g-p.pdf pdf_icon

BLP06N08G-P

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85... See More ⇒

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Detailed specifications: BLP065N08GL-Q, BLP065N08G-P, BLP065N08G-U, BLP065N10GL-B, BLP065N10GL-D, BLP065N10GL-P, BLP065N10GL-Q, BLP06N08G-B, MMIS60R580P, BLP075N10G-B, BLP075N10G-P, BLP08N10G-B, BLP08N10G-D, BLP08N10G-P, BLP08N10G-Q, BLP10N20J-B, BLP10N20J-P

Keywords - BLP06N08G-P MOSFET specs

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