BLP08N10G-B Specs and Replacement

Type Designator: BLP08N10G-B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-263

BLP08N10G-B substitution

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BLP08N10G-B datasheet

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BLP08N10G-B

BLP08N10G MOSFET Step-Down Converter , 1 Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒

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BLP08N10G-B

BLP08N10G MOSFET Step-Down Converter , 1 Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒

Detailed specifications: BLP065N10GL-B, BLP065N10GL-D, BLP065N10GL-P, BLP065N10GL-Q, BLP06N08G-B, BLP06N08G-P, BLP075N10G-B, BLP075N10G-P, 60N06, BLP08N10G-D, BLP08N10G-P, BLP08N10G-Q, BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E

Keywords - BLP08N10G-B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.