BLP08N10G-D Specs and Replacement
Type Designator: BLP08N10G-D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 44.5 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
BLP08N10G-D substitution
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BLP08N10G-D datasheet
blp08n10g-d blp08n10g-q.pdf
BLP08N10G MOSFET Step-Down Converter , 1 Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
blp08n10g-p blp08n10g-b.pdf
BLP08N10G MOSFET Step-Down Converter , 1 Description BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
Detailed specifications: BLP065N10GL-D, BLP065N10GL-P, BLP065N10GL-Q, BLP06N08G-B, BLP06N08G-P, BLP075N10G-B, BLP075N10G-P, BLP08N10G-B, IRFP064N, BLP08N10G-P, BLP08N10G-Q, BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D
Keywords - BLP08N10G-D MOSFET specs
BLP08N10G-D cross reference
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BLP08N10G-D substitution
BLP08N10G-D replacement
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