BLP12N10GL-Q Specs and Replacement
Type Designator: BLP12N10GL-Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 274 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6
BLP12N10GL-Q substitution
- MOSFET ⓘ Cross-Reference Search
BLP12N10GL-Q datasheet
blp12n10gl-q.pdf
BLP12N10GL Step-Down Converter , 1 Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 35 A ... See More ⇒
blp12n10gl-d.pdf
BLP12N10GL MOSFET Step-Down Converter , 1 Description BLP12N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS ... See More ⇒
blp12n10g-e.pdf
BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D ... See More ⇒
blp12n10g-b blp12n10g-p.pdf
BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D ... See More ⇒
Detailed specifications: BLP08N10G-P, BLP08N10G-Q, BLP10N20J-B, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, IRF540, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D
Keywords - BLP12N10GL-Q MOSFET specs
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