BLP12N10G-U Datasheet and Replacement
Type Designator: BLP12N10G-U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 271 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-251
BLP12N10G-U substitution
BLP12N10G-U Datasheet (PDF)
blp12n10g-d blp12n10g-u.pdf
BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 49 A D
blp12n10g-e.pdf
BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 11 A D
blp12n10g-b blp12n10g-p.pdf
BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 55 A D
blp12n10g-q.pdf
BLP12N10G Step-Down Converter , 1Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 50 A D
Datasheet: BLP10N20J-P , BLP12N10G-B , BLP12N10G-D , BLP12N10G-E , BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P , BLP12N10G-Q , IRFZ44 , BLP14N08L-D , BLP14N08L-Q , BLP20N10L-D , BLP20N10L-Q , BLQM15N06L-D , BLS60R036-F , BLS60R036-W , BLS60R150-A .
History: IRFP27N60KPBF | PP9H06BI | SPW20N60C3
Keywords - BLP12N10G-U MOSFET datasheet
BLP12N10G-U cross reference
BLP12N10G-U equivalent finder
BLP12N10G-U lookup
BLP12N10G-U substitution
BLP12N10G-U replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IRFP27N60KPBF | PP9H06BI | SPW20N60C3
LIST
Last Update
MOSFET: AGM60P20R | AGM60P20D | AGM60P20AP | AGM60P14D | AGM60P14AP | AGM60P14A | AGM60P100A | AGM60P06S | AGM609S | AGM609MNA | AGM609F | AGM609D | AGM609C | AGM609AP | AGM40P26S | AGM40P26E
Popular searches
2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout

