BLS60R150F-I MOSFET Datasheet: N-Ch, 600V, 23A. Full specification with pinout and replacement list

BLS60R150F-I Specs and Replacement

Type Designator: BLS60R150F-I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 45 nC

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-262

BLS60R150F-I substitution

- MOSFET ⓘ Cross-Reference Search

BLS60R150F-I datasheet

..1. Size:1047K belling
bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf pdf_icon

BLS60R150F Power MOSFET 1 Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.max I 23 A D R 0.13 DS(ON).Typ FEATURES Fast body diode MOSFET Fa... See More ⇒

5.1. Size:863K belling
bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

8.1. Size:632K belling
bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

8.2. Size:1056K belling
bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒