All MOSFET. BLS70R180-P Equivalents Search

 

BLS70R180-P Spec and Replacement


   Type Designator: BLS70R180-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 990 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220

 BLS70R180-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLS70R180-P Specs

 ..1. Size:585K  belling
 bls70r180-p bls70r180-a bls70r180-i bls70r180-b bls70r180-w.pdf pdf_icon

BLS70R180-P

BLS70R180 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

 8.1. Size:604K  belling
 bls70r600-p bls70r600-a bls70r600-u bls70r600-d.pdf pdf_icon

BLS70R180-P

BLS70R600 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

 8.2. Size:632K  belling
 bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf pdf_icon

BLS70R180-P

BLS70R420 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

 8.3. Size:1100K  belling
 bls70r900-d.pdf pdf_icon

BLS70R180-P

BLS70R900 - Power MOSFET 1 Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒

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Detailed specifications: BLS65R380-U , BLS65R560-A , BLS65R560-D , BLS65R560-P , BLS65R560-U , BLS70R180-A , BLS70R180-B , BLS70R180-I , 4N60 , BLS70R180-W , BLS70R420-A , BLS70R420-B , BLS70R420-D , BLS70R420-P , BLS70R420-U , BLS70R600-A , BLS70R600-D .

Keywords - BLS70R180-P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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