BLS70R600-P MOSFET Datasheet: N-Ch, 700V, 8A. Full specification with pinout and replacement list

BLS70R600-P Specs and Replacement

Type Designator: BLS70R600-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 530 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220

BLS70R600-P substitution

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BLS70R600-P datasheet

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BLS70R600 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

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BLS70R420 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

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BLS70R900 - Power MOSFET 1 Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒

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BLS70R180 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

Detailed specifications: BLS70R180-W , BLS70R420-A , BLS70R420-B , BLS70R420-D , BLS70R420-P , BLS70R420-U , BLS70R600-A , BLS70R600-D , 18N50 , BLS70R600-U , BLS70R900-D , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , MPGJ10R7 .