BLS70R900-D Spec and Replacement
Type Designator: BLS70R900-D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-252
BLS70R900-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS70R900-D Specs
bls70r900-d.pdf
BLS70R900 - Power MOSFET 1 Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒
bls70r600-p bls70r600-a bls70r600-u bls70r600-d.pdf
BLS70R600 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒
bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf
BLS70R420 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒
bls70r180-p bls70r180-a bls70r180-i bls70r180-b bls70r180-w.pdf
BLS70R180 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒
Detailed specifications: BLS70R420-B , BLS70R420-D , BLS70R420-P , BLS70R420-U , BLS70R600-A , BLS70R600-D , BLS70R600-P , BLS70R600-U , IRF520 , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , MPGJ10R7 , MPGJ80R040 , MPGP06R030H .
Keywords - BLS70R900-D MOSFET specs
BLS70R900-D cross reference
BLS70R900-D equivalent finder
BLS70R900-D lookup
BLS70R900-D substitution
BLS70R900-D replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
