FQP20N06 Datasheet. Specs and Replacement
Type Designator: FQP20N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO220
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FQP20N06 substitution
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FQP20N06 datasheet
fqp20n06.pdf
May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒
fqp20n06.pdf
May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒
fqp20n06tstu.pdf
May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒
fqp20n06l.pdf
May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tail... See More ⇒
Detailed specifications: FQP17N40, FDD6688, FQP17P06, FQP17P10, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, IRFB3607, FQP20N06L, FQP22N30, FQP24N08, FQP27N25, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80
Keywords - FQP20N06 MOSFET specs
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