FQP20N06 Datasheet. Specs and Replacement

Type Designator: FQP20N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220

  📄📄 Copy 

FQP20N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQP20N06 datasheet

 ..1. Size:655K  fairchild semi
fqp20n06.pdf pdf_icon

FQP20N06

May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 ..2. Size:657K  onsemi
fqp20n06.pdf pdf_icon

FQP20N06

May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 0.1. Size:654K  fairchild semi
fqp20n06tstu.pdf pdf_icon

FQP20N06

May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 0.2. Size:673K  fairchild semi
fqp20n06l.pdf pdf_icon

FQP20N06

May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tail... See More ⇒

Detailed specifications: FQP17N40, FDD6688, FQP17P06, FQP17P10, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, IRFB3607, FQP20N06L, FQP22N30, FQP24N08, FQP27N25, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80

Keywords - FQP20N06 MOSFET specs

 FQP20N06 cross reference

 FQP20N06 equivalent finder

 FQP20N06 pdf lookup

 FQP20N06 substitution

 FQP20N06 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.