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FQP27N25 Spec and Replacement


   Type Designator: FQP27N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220

 FQP27N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP27N25 Specs

 ..1. Size:768K  fairchild semi
 fqp27n25.pdf pdf_icon

FQP27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e... See More ⇒

 9.1. Size:746K  fairchild semi
 fqp27p06.pdf pdf_icon

FQP27N25

May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒

 9.2. Size:726K  fairchild semi
 fqp27p06 sw82127.pdf pdf_icon

FQP27N25

May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒

 9.3. Size:905K  onsemi
 fqp27p06.pdf pdf_icon

FQP27N25

FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Features - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, Description ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Gate Charge (Typ. 33 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF) MOSFET technology has been... See More ⇒

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Detailed specifications: FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 , NCEP15T14 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L .

History: FQP20N06

Keywords - FQP27N25 MOSFET specs

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