FQP27N25 Datasheet. Specs and Replacement

Type Designator: FQP27N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO220

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FQP27N25 substitution

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FQP27N25 datasheet

 ..1. Size:768K  fairchild semi
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FQP27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e... See More ⇒

 9.1. Size:746K  fairchild semi
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FQP27N25

May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒

 9.2. Size:726K  fairchild semi
 fqp27p06 sw82127.pdf pdf_icon

FQP27N25

May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒

 9.3. Size:905K  onsemi
 fqp27p06.pdf pdf_icon

FQP27N25

FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Features - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, Description ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Gate Charge (Typ. 33 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF) MOSFET technology has been... See More ⇒

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Detailed specifications: FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, FQP20N06, FQP20N06L, FQP22N30, FQP24N08, NCEP15T14, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80, FQP8N60C, FQP2N90, FQP30N06, FQP30N06L

Keywords - FQP27N25 MOSFET specs

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