FQP2N60C Spec and Replacement
Type Designator: FQP2N60C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 2
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7
Ohm
Package:
TO220
FQP2N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP2N60C Specs
..1. Size:1366K fairchild semi
fqp2n60c fqpf2n60c.pdf 
April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒
..2. Size:1596K onsemi
fqp2n60c fqpf2n60c.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
7.1. Size:1331K fairchild semi
fqp2n60.pdf 
April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒
9.1. Size:712K fairchild semi
fqp2n50.pdf 
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been... See More ⇒
9.2. Size:699K fairchild semi
fqp2na90.pdf 
September 2000 TM QFET QFET QFET QFET FQP2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has ... See More ⇒
9.3. Size:649K fairchild semi
fqp2n80.pdf 
September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailo... See More ⇒
9.4. Size:989K fairchild semi
fqp2n40.pdf 
October 2013 FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Description Features This N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 A produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta... See More ⇒
9.5. Size:744K fairchild semi
fqp2n90.pdf 
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has bee... See More ⇒
9.6. Size:727K fairchild semi
fqp2n30.pdf 
May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been es... See More ⇒
9.7. Size:1031K onsemi
fqp2n40.pdf 
FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, Description ID = 0.9 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC) is produced using ON Semiconductor s proprietary Low Crss (Typ. 3.0 pF) planar stripe and DMOS technology. This advanced Fast Switching MOSFET technolog... See More ⇒
9.8. Size:1296K onsemi
fqp2n90.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQP19N20C
, FQPF12N60C
, FQP20N06
, FQP20N06L
, FQP22N30
, FQP24N08
, FQP27N25
, FQP27P06
, STP80NF70
, FQP12N60C
, FQP2N80
, FQP8N60C
, FQP2N90
, FQP30N06
, FQP30N06L
, FQP32N20C
, FQB6N40C
.
Keywords - FQP2N60C MOSFET specs
FQP2N60C cross reference
FQP2N60C equivalent finder
FQP2N60C lookup
FQP2N60C substitution
FQP2N60C replacement
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