MPVU2N65BK MOSFET. Datasheet pdf. Equivalent
Type Designator: MPVU2N65BK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.3 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-251
MPVU2N65BK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPVU2N65BK Datasheet (PDF)
mpva2n65bk mpvu2n65bk mpvd2n65bk.pdf
MPVX2N65BK SeriesPower MOSFETMPSW60M041FEATURES APPLICATIONSBVDSS: 650V, ID=2A Switch Mode Power Supply (SMPS)RDS(on) : 4.8(Max) @VGS=10V Uninterruptible Power Supply (UPS)Very Low FOM (RDS(on) *Qg) Power Factor Correction (PFC)Excellent stability and uniformity AC to DC ConvertersDGTO-252TO-220F STO-251Ordering InformationType NO. Mark
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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