FIR12N80FG Specs and Replacement

Type Designator: FIR12N80FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

FIR12N80FG substitution

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FIR12N80FG datasheet

 ..1. Size:4008K  first semi
 fir12n80fg.pdf pdf_icon

FIR12N80FG

FIR12N80FG 800V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 45nC (Typ.) BVDSS=800V,ID=12A G D S RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested Marking Diagram D G S Y = Year A = Assembly Location WW = Work Week ... See More ⇒

 8.1. Size:1752K  first semi
 fir12n65fg.pdf pdf_icon

FIR12N80FG

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C... See More ⇒

 8.2. Size:1619K  first semi
 fir12n15lg.pdf pdf_icon

FIR12N80FG

FIR12N15LG 150V N-Channel MOSFET-D PIN Connection TO-252(D-PAK) Features Low Intrinsic Capacitances. D Excellent Switching Characteristics. Extended Safe Operating Area. G Unrivalled Gate Charge Qg= 15.5nC (Typ.). S BVDSS=150V,ID=12A RDS(on) 0.29 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram YAWWVT Y =... See More ⇒

 8.3. Size:3579K  first semi
 fir12n70fg.pdf pdf_icon

FIR12N80FG

FIR12N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 44nC (Typ.). BVDSS=700V,ID=12A G DS RDS(on) 0.75 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc... See More ⇒

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Detailed specifications: FIR110N10PG, FIR11N40FG, FIR11N90ANG, FIR11NS65AFG, FIR11NS70AFG, FIR120N08PG, FIR12N15LG, FIR12N70FG, IRFP260N, FIR13N50FG, FIR14N50FG, FIR14N65FG, FIR14NS65AFG, FIR14NS70AFG, FIR150N06PG, FIR15N10LG, FIR16N06DG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.