All MOSFET. FIR150N06PG Datasheet

 

FIR150N06PG Datasheet and Replacement


   Type Designator: FIR150N06PG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-220AB
 

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FIR150N06PG Datasheet (PDF)

 ..1. Size:4641K  first semi
 fir150n06pg.pdf pdf_icon

FIR150N06PG

FIR150N06PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.1. Size:3526K  first semi
 fir15n10lg.pdf pdf_icon

FIR150N06PG

FIR15N10LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252General DescriptionThe FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c

Datasheet: FIR12N15LG , FIR12N70FG , FIR12N80FG , FIR13N50FG , FIR14N50FG , FIR14N65FG , FIR14NS65AFG , FIR14NS70AFG , IRFP250N , FIR15N10LG , FIR16N06DG , FIR16N50FG , FIR18N50FG , FIR18N65FG , FIR19N20LG , FIR20N06LG , FIR20N10LG .

History: EMH2314 | FDS7066N7 | SM7518NSU | HGB080N08SL | SM7508NSF | DMP2165UW | IXTK90N25L2

Keywords - FIR150N06PG MOSFET datasheet

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