All MOSFET. FIR150N06PG Datasheet

 

FIR150N06PG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR150N06PG
   Marking Code: FIR150N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 163 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-220AB

 FIR150N06PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR150N06PG Datasheet (PDF)

 ..1. Size:4641K  first semi
 fir150n06pg.pdf

FIR150N06PG FIR150N06PG

FIR150N06PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.1. Size:3526K  first semi
 fir15n10lg.pdf

FIR150N06PG FIR150N06PG

FIR15N10LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252General DescriptionThe FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AON6992

 

 
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