FIR50N15PG Datasheet and Replacement
Type Designator: FIR50N15PG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220AB
FIR50N15PG substitution
FIR50N15PG Datasheet (PDF)
fir50n15pg.pdf

FIR50N15PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR50N15PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
fir50n06lg.pdf

FIR50N06LGN-Channel Enhancement Mode Power Mosfet-EPIN Connection TO-252DescriptionThe FIR50N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
Datasheet: FIR30N03D3G , FIR40N10LG , FIR40N15LG , FIR40N20LG , FIR4N70FG , FIR4N80FG , FIR4N90FG , FIR50N06LG , AON7506 , FIR5N50FG , FIR5N65FG , FIR5N80FG , FIR5NS70ALG , FIR60N04LG , FIR6N40FG , FIR6N60FG , FIR6N65FG .
History: H5N60P | D4N80 | IRFB7534 | BRCS4N65AA | IXFK44N50 | LND2N60
Keywords - FIR50N15PG MOSFET datasheet
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History: H5N60P | D4N80 | IRFB7534 | BRCS4N65AA | IXFK44N50 | LND2N60



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