FIR6N70FG Specs and Replacement
Type Designator: FIR6N70FG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36.93 nS
Cossⓘ - Output Capacitance: 98 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-220F
FIR6N70FG substitution
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FIR6N70FG datasheet
fir6n70fg.pdf
FIR6N70FG N - Ch a n n el P o w e r M O S F ET-E GENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FG effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr... See More ⇒
fir6n40fg.pdf
FIR6N40FG 400V N-Channel MOSFET -T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=22nC (Typ.). BVDSS=400V,ID=6A G RDS(on) 1.0 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly... See More ⇒
fir6n90fg.pdf
FIR6N90FG 900V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=30nC (Typ.). BVDSS=900V,ID=6A G D S RDS(on) 2.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly L... See More ⇒
Detailed specifications: FIR5N50FG, FIR5N65FG, FIR5N80FG, FIR5NS70ALG, FIR60N04LG, FIR6N40FG, FIR6N60FG, FIR6N65FG, BS170, FIR6N90FG, FIR7NS65AFG, FIR7NS70AFG, FIR7NS70ALG, FIR80N03LG, FIR80N08PG, FIR80N10LG, FIR8N60FG
Keywords - FIR6N70FG MOSFET specs
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History: FIR6N90FG
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