All MOSFET. FIR6N70FG Datasheet

 

FIR6N70FG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR6N70FG
   Marking Code: FIR6N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.94 nC
   trⓘ - Rise Time: 36.93 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-220F

 FIR6N70FG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR6N70FG Datasheet (PDF)

 ..1. Size:2240K  first semi
 fir6n70fg.pdf

FIR6N70FG FIR6N70FG

FIR6N70FGN - Ch a n n el P o w e r M O S F ET-EGENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FGeffect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr

 9.1. Size:5764K  first semi
 fir6n65fg.pdf

FIR6N70FG FIR6N70FG

FIR6N65FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 650 V ID 6 A PD(TC=25) 85 W RDS(ON)Typ 1.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson1.7) Low Gate Charge (Typical Data:19nC) G Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test S Marking DiagramApplications

 9.2. Size:2904K  first semi
 fir6n40fg.pdf

FIR6N70FG FIR6N70FG

FIR6N40FG400V N-Channel MOSFET -T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=22nC (Typ.). BVDSS=400V,ID=6AG RDS(on) : 1.0 (Max) @VG=10V D S 100% Avalanche Testedg Schematic dia ram D G S Marking DiagramY = YearA = Assembly

 9.3. Size:2066K  first semi
 fir6n90fg.pdf

FIR6N70FG FIR6N70FG

FIR6N90FG900V N-Channel MOSFET-T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=30nC (Typ.). BVDSS=900V,ID=6AG D S RDS(on) : 2.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly L

 9.4. Size:3712K  first semi
 fir6n60fg.pdf

FIR6N70FG FIR6N70FG

FIR6N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 6 A PD(TC=25) 85 WRDS(ON) 1.4 G FeaturesD S Fast Switching gSchematic dia ram Low ON Resistance(Rdson1.6) D Low Gate Charge (Typical Data: 22nC) Low Reverse transfer capacitances(Typical: 14pF) G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPowe

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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