FIR6N70FG
MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR6N70FG
Marking Code: FIR6N70F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21.94
nC
trⓘ - Rise Time: 36.93
nS
Cossⓘ -
Output Capacitance: 98
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
TO-220F
FIR6N70FG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR6N70FG
Datasheet (PDF)
..1. Size:2240K first semi
fir6n70fg.pdf
FIR6N70FGN - Ch a n n el P o w e r M O S F ET-EGENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FGeffect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr
9.1. Size:5764K first semi
fir6n65fg.pdf
FIR6N65FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 650 V ID 6 A PD(TC=25) 85 W RDS(ON)Typ 1.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson1.7) Low Gate Charge (Typical Data:19nC) G Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test S Marking DiagramApplications
9.2. Size:2904K first semi
fir6n40fg.pdf
FIR6N40FG400V N-Channel MOSFET -T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=22nC (Typ.). BVDSS=400V,ID=6AG RDS(on) : 1.0 (Max) @VG=10V D S 100% Avalanche Testedg Schematic dia ram D G S Marking DiagramY = YearA = Assembly
9.3. Size:2066K first semi
fir6n90fg.pdf
FIR6N90FG900V N-Channel MOSFET-T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=30nC (Typ.). BVDSS=900V,ID=6AG D S RDS(on) : 2.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly L
9.4. Size:3712K first semi
fir6n60fg.pdf
FIR6N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 6 A PD(TC=25) 85 WRDS(ON) 1.4 G FeaturesD S Fast Switching gSchematic dia ram Low ON Resistance(Rdson1.6) D Low Gate Charge (Typical Data: 22nC) Low Reverse transfer capacitances(Typical: 14pF) G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPowe
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