FIR8N80FG Specs and Replacement

Type Designator: FIR8N80FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-220F

FIR8N80FG substitution

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FIR8N80FG datasheet

 ..1. Size:4035K  first semi
 fir8n80fg.pdf pdf_icon

FIR8N80FG

FIR8N80FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) 1.9 (Max) @VG=10V g Schematic dia ram D 100% Avalanche Tested G S Marking Diagram Y = Year A ... See More ⇒

 9.1. Size:3949K  first semi
 fir8n65fg.pdf pdf_icon

FIR8N80FG

FIR8N65FG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=28nC (Typ.). BVDSS=650V,ID=7A G RDS(on) 1.30 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = W... See More ⇒

 9.2. Size:2461K  first semi
 fir8n60fg.pdf pdf_icon

FIR8N80FG

FIR8N60FG 600V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) 1.2 (Max) @VG=10V G D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly... See More ⇒

 9.3. Size:3128K  first semi
 fir8n70fg.pdf pdf_icon

FIR8N80FG

FIR8N70FG PIN Connection TO-220F 700V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 22nC (Typ.) G BVDSS=700V,ID=8A D S RDS(on) 1.4 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc... See More ⇒

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Detailed specifications: FIR7NS70AFG, FIR7NS70ALG, FIR80N03LG, FIR80N08PG, FIR80N10LG, FIR8N60FG, FIR8N65FG, FIR8N70FG, 20N50, FIR96N08PG, FIR9N50FG, FIR9N65LG, FIR9N90FG, DAC014N120Z5, DAC015N065Z2, DAC016N120P2, DAC016N120Z2

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