FIR9N65LG Datasheet and Replacement. Cross Reference Search

FIR9N65LG Datasheet (PDF)

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FIR9N65LG9A 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-252(D-PAK)FIR9N65LG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMhigh-voltage planar VDMOS technology. The improved process and Dcell structure have been especially tailored to minimize on-state resistance, provide superior switching

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FIR9N50FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 500 VID 9 APD (TC=25) 130 WRDS(ON) 0.68 G Features D S Fast Switching gSchematic dia ram ) Low ON Resistance(Rdson 0.85 D Low Gate Charge (Typical Data:13nC) Low Reverse transfer capacitances(Typical:12pF) G 100% Single Pulse avalanche energy Test S Applications Power switch circu

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FIR9N90FG900V N-Channel MOSFET -TTO-220F Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge: Qg= 45nC (Typ.). BVDSS=900V,ID=9A RDS(on) : 1.4 (Max) @VG=10V 100% Avalanche Tested1.Gate (G)2.Drain (D)3.Source (S)Absolute Maximum Ratings (Ta=25 unless otherwise noted)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .