All MOSFET. DAC021N120Z4 Datasheet

 

DAC021N120Z4 Datasheet and Replacement


   Type Designator: DAC021N120Z4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 469 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0294 Ohm
   Package: TO247-4L
 

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DAC021N120Z4 Datasheet (PDF)

 ..1. Size:784K  dacosemi
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DAC021N120Z4

DAC021N120Z4Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 100AD(@25 ) RDS(ON) 20.5m TO-247-4L Applications Package Dimensions E AA2P

 9.1. Size:474K  dacosemi
 dac020n065z1.pdf pdf_icon

DAC021N120Z4

DAC020N065Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 107AD(@25 ) DrainRDS(ON) 20m(Pin1, TAB) TO-247-4L Package Gate

Datasheet: FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , IRF730 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 .

History: PE532DY | OSG60R1K8PF

Keywords - DAC021N120Z4 MOSFET datasheet

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