DAC021N120Z4 Datasheet and Replacement
Type Designator: DAC021N120Z4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 469 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0294 Ohm
Package: TO247-4L
DAC021N120Z4 substitution
DAC021N120Z4 Datasheet (PDF)
dac021n120z4.pdf
DAC021N120Z4Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 100AD(@25 ) RDS(ON) 20.5m TO-247-4L Applications Package Dimensions E AA2P
dac020n065z1.pdf
DAC020N065Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 107AD(@25 ) DrainRDS(ON) 20m(Pin1, TAB) TO-247-4L Package Gate
Datasheet: FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , IRFB31N20D , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 .
Keywords - DAC021N120Z4 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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