DAC040N120Z5 Specs and Replacement

Type Designator: DAC040N120Z5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO247-4L

DAC040N120Z5 substitution

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DAC040N120Z5 datasheet

 ..1. Size:1556K  dacosemi
 dac040n120z5.pdf pdf_icon

DAC040N120Z5

DAC040N120Z5 Silicon Carbide Enhancement Mode MOSFET Features VDSS 1200V Preliminary I 54A D(@25 ) RDS(ON) 40m TO-247-4L Benefits ... See More ⇒

 3.1. Size:492K  dacosemi
 dac040n120z1.pdf pdf_icon

DAC040N120Z5

DAC040N120Z1 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Features I 62A D(@25 ) RDS(ON) 40m Drain (Pin1, TAB) TO-247-.4L Package ... See More ⇒

 4.1. Size:1396K  dacosemi
 dac040n120p2.pdf pdf_icon

DAC040N120Z5

DAC040N120P2 Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Preliminary Features I 60A D(@25 ) RDS(ON) 40m TO-247-3L Benefits ... See More ⇒

Detailed specifications: DAC015N065Z2, DAC016N120P2, DAC016N120Z2, DAC020N065Z1, DAC021N120Z4, DAC030N120Z1, DAC040N120P2, DAC040N120Z1, IRFZ48N, DAC060N120P1, DACMH120N1200, DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200, DACMI060N120BZK, DACMI060N170BZK

Keywords - DAC040N120Z5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.