DAC040N120Z5 Datasheet and Replacement
Type Designator: DAC040N120Z5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 96 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO247-4L
DAC040N120Z5 substitution
DAC040N120Z5 Datasheet (PDF)
dac040n120z5.pdf

DAC040N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200VPreliminary I 54AD(@25 ) RDS(ON) 40m TO-247-4L Benefits
dac040n120z1.pdf

DAC040N120Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 1200VFeaturesI 62AD(@25 ) RDS(ON) 40mDrain (Pin1, TAB) TO-247-.4L Package
dac040n120p2.pdf

DAC040N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 60AD(@25 ) RDS(ON) 40m TO-247-3LBenefits
Datasheet: DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , RU7088R , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK .
History: FC6B21150L | FTK2N65P | CS6768 | APT20M18B2VRG | GSM1016 | 4402 | CEU02N7G
Keywords - DAC040N120Z5 MOSFET datasheet
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History: FC6B21150L | FTK2N65P | CS6768 | APT20M18B2VRG | GSM1016 | 4402 | CEU02N7G



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