All MOSFET. FQP3N80C Datasheet

 

FQP3N80C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP3N80C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO220

FQP3N80C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP3N80C Datasheet (PDF)

1.1. fqp3n80c fqpf3n80c.pdf Size:810K _fairchild_semi

FQP3N80C
FQP3N80C

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fast swi

5.1. fqp3n60c.pdf Size:741K _fairchild_semi

FQP3N80C
FQP3N80C

January 2006 TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS(on) = 3.4? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 10.5 nC) stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially tailored to • Fast switchin

5.2. fqp3n30.pdf Size:708K _fairchild_semi

FQP3N80C
FQP3N80C

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.2A, 300V, RDS(on) = 2.2? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially ta

5.3. fqp3n50c.pdf Size:1267K _fairchild_semi

FQP3N80C
FQP3N80C

® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

5.4. fqp3n50c fqpf3n50c.pdf Size:1269K _fairchild_semi

FQP3N80C
FQP3N80C

® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast

Datasheet: FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , BUZ10 , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 .

 


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