P0770JD
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0770JD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 71
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.653
Ohm
Package:
TO-252
P0770JD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0770JD
Datasheet (PDF)
..1. Size:305K niko-sem
p0770jd.pdf 
N-Channel Enhancement Mode P0770JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 700V 653m 7A 1. GATE 2. DRAIN G 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC =
8.1. Size:316K niko-sem
p0770jf.pdf
N-Channel Enhancement Mode P0770JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 630m 7A DG1. GATE S 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC
9.1. Size:766K unikc
p0770ei.pdf
P0770EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.5 @VGS = 10V700V 7ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 700 VVGSGate-Source Voltage 30 VTC= 25 C7IDContinuous Drain Current2TC= 100 C4.4AIDM20Pulsed Drain Current1
9.2. Size:544K unikc
p0770etf-s.pdf
P0770ETF / P0770ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4 @VGS = 10V700V 7ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 700VVGSGate-Source Voltage 30TC = 25 C7IDContinuous Drain Current2TC = 100 C4AIDM2
9.3. Size:764K unikc
p0770eis.pdf
P0770EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.5 @VGS = 10V700V 7ATO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 700 VVGSGate-Source Voltage 30 VTC= 25 C7IDContinuous Drain Current2TC= 100 C4.4AIDM20Pulsed Drain Cur
9.4. Size:193K niko-sem
p0770ei.pdf
N-Channel Enhancement Mode P0770EINIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G700V 1.5 7A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 700 VGate-Source Voltage VGS 30 VTC = 25 C 7
9.5. Size:744K niko-sem
p0770ed.pdf
N-Channel Enhancement Mode P0770ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G700V 1.5 7A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25
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