FQB11N40C PDF and Equivalents Search

 

FQB11N40C Specs and Replacement

Type Designator: FQB11N40C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO263 D2PAK

FQB11N40C substitution

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FQB11N40C datasheet

 ..1. Size:972K  fairchild semi
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FQB11N40C

November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai... See More ⇒

 ..2. Size:1039K  onsemi
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FQB11N40C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:970K  fairchild semi
fqb11n40ctm.pdf pdf_icon

FQB11N40C

October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia... See More ⇒

 6.1. Size:565K  fairchild semi
fqb11n40tm fqi11n40tu.pdf pdf_icon

FQB11N40C

November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tai... See More ⇒

Detailed specifications: FQP3N30, FQP3N60C, FCP11N60, FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, 8N60, FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, FQP50N06L

Keywords - FQB11N40C MOSFET specs

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 FQB11N40C replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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