P0865ETF Datasheet. Specs and Replacement

Type Designator: P0865ETF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.786 Ohm

Package: TO-220F

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P0865ETF datasheet

 ..1. Size:210K  niko-sem
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P0865ETF

N-Channel High Voltage Mode P0865ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 650V 786m 8A 1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25 ... See More ⇒

Detailed specifications: P0660EI, P0706BD, P0706BK, P0706BV, P0765JD, P0770ED, P0770JD, P0770JF, CS150N03A8, P0903YK, P0908AK, P1010AT, P1050ETF, P1060ETFNA, P1065ETF, P1120EF, P1160JD

Keywords - P0865ETF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.