All MOSFET. P0865ETF Datasheet

 

P0865ETF Datasheet and Replacement


   Type Designator: P0865ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.786 Ohm
   Package: TO-220F
 

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P0865ETF Datasheet (PDF)

 ..1. Size:210K  niko-sem
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P0865ETF

N-Channel High Voltage Mode P0865ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G650V 786m 8A 1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25

Datasheet: P0660EI , P0706BD , P0706BK , P0706BV , P0765JD , P0770ED , P0770JD , P0770JF , IRLB4132 , P0903YK , P0908AK , P1010AT , P1050ETF , P1060ETFNA , P1065ETF , P1120EF , P1160JD .

History: IPP60R600C6 | AOLF66610 | P0920AD | NVD5806N | 2SK802 | NCE60NF260F | P9006EI

Keywords - P0865ETF MOSFET datasheet

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