P1060ETFNA Datasheet. Specs and Replacement

Type Designator: P1060ETFNA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 153 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220FN

P1060ETFNA substitution

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P1060ETFNA datasheet

 ..1. Size:235K  niko-sem
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P1060ETFNA

P1060ETFNA N-Channel Enhancement Mode NIKO-SEM TO-220FN Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 0.75 10A 3. SOURCE S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Vol... See More ⇒

 6.1. Size:885K  unikc
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P1060ETFNA

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.77 @VGS = 10V 600V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6 A IDM ... See More ⇒

 9.1. Size:523K  unikc
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P1060ETFNA

P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.75 @VGS = 10V 600V 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC= 25 C 10 ID Continuous Drain Current2 TC= 100 C 6.2 A IDM... See More ⇒

 9.2. Size:462K  unikc
p1060at.pdf pdf_icon

P1060ETFNA

P1060AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.75 @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 10 ID Continuous Drain Current2 TC = 100 C 6 A IDM 40 Pulsed Drain Current... See More ⇒

Detailed specifications: P0770ED, P0770JD, P0770JF, P0865ETF, P0903YK, P0908AK, P1010AT, P1050ETF, TK10A60D, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN, P1306ED, P1306EK

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