All MOSFET. P1160JF Datasheet

 

P1160JF Datasheet and Replacement


   Type Designator: P1160JF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

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P1160JF Datasheet (PDF)

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P1160JF

N-Channel Enhancement Mode P1160JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 400m 11A DG1. GATE S 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC

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P1160JF

N-Channel Enhancement Mode P1160JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 600V 418m 11A 1. GATE 2. DRAIN G 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC

Datasheet: P0903YK , P0908AK , P1010AT , P1050ETF , P1060ETFNA , P1065ETF , P1120EF , P1160JD , IRFP250 , P1165JD , P1165JFN , P1306ED , P1306EK , P1350ETF , P1406BV , P1410BD , P1410BK .

History: BLP032N06-Q | BLP075N10G-P | BLP023N10-P | BLP065N08GL-Q | FQPF50N06L | 11NM70G-TF1-T | IRF7807D2

Keywords - P1160JF MOSFET datasheet

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