P1350ETF Datasheet. Specs and Replacement

Type Designator: P1350ETF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO-220F

P1350ETF substitution

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P1350ETF datasheet

 ..1. Size:657K  niko-sem
 p1350etf.pdf pdf_icon

P1350ETF

P1350ETF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G 3. SOURCE 500V 0.52 13A S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Volta... See More ⇒

 9.1. Size:411K  unikc
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P1350ETF

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 9.2. Size:471K  unikc
 p1350at.pdf pdf_icon

P1350ETF

P1350AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 0.52 @VGS = 10V 13A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 13 ID Continuous Drain Current2 TC = 100 C 10 A IDM 45 Pulsed Drain Curren... See More ⇒

Detailed specifications: P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN, P1306ED, P1306EK, RFP50N06, P1406BV, P1410BD, P1410BK, P1560JD, P1560JF, P1610AK, P1610ATF, P1615ATA

Keywords - P1350ETF MOSFET specs

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