P1350ETF
MOSFET. Datasheet pdf. Equivalent
Type Designator: P1350ETF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 39
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 159
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52
Ohm
Package:
TO-220F
P1350ETF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1350ETF
Datasheet (PDF)
..1. Size:657K niko-sem
p1350etf.pdf 
P1350ETF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G3. SOURCE 500V 0.52 13A S100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Volta
9.1. Size:411K unikc
p1350atf-s.pdf
P1350ATF / P1350ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.52 @VGS = 10V 13ATO-220F TO-220FS 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C13IDContinuous Drain Current2TC = 100
9.2. Size:471K unikc
p1350at.pdf
P1350ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.52 @VGS = 10V 13ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C13IDContinuous Drain Current2TC = 100 C10AIDM45Pulsed Drain Curren
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