All MOSFET. P2020YD Datasheet

 

P2020YD Datasheet and Replacement


   Type Designator: P2020YD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252
 

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P2020YD Datasheet (PDF)

 ..1. Size:230K  niko-sem
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P2020YD

P2020YD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 95m 20A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V TC =

Datasheet: P1560JD , P1560JF , P1610AK , P1610ATF , P1615ATA , P1615ATFA , P1625ED , P1850EF , IRF520 , P2060JF , P2206BEA , P2206BT , P2206BTF , P2206BV , P2206HK , P2610BI , P2610BK .

History: 25N10G-TM3-T | APT4080BN

Keywords - P2020YD MOSFET datasheet

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