FQPF5N50C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQPF5N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO220F
FQPF5N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF5N50C Datasheet (PDF)
fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf
TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqp5n50c fqpf5n50c.pdf
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fqpf5n50cf fqpf5n50cftu.pdf
TMFRFETFQPF5N50CF 500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini- F
fqpf5n50.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf
TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t
fqpf5n20l.pdf
December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
fqpf5n30.pdf
May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e
fqpf5n40.pdf
April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been
fqpf5n15.pdf
May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been e
fqpf5n60c.pdf
December 2013FQP5N60C / FQPF5N60CN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC)technology has been
fqpf5n20.pdf
April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been
fqpf5n60.pdf
TMQFETFQPF5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especially tailored to Fas
fqpf5n90.pdf
September 2000TMQFETQFETQFETQFETFQPF5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has b
fqpf5n80.pdf
September 2000TMQFETFQPF5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailo
fqp5n60c fqpf5n60c.pdf
TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t
Datasheet: FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , HY1707I , FQP65N06 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TMWS , FQP6N90C .
History: AM90N03-03P
